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onsemi N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-247 HUF75344G3

onsemi N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-247 HUF75344G3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 285 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 20.82mm, Length: 15.87mm

GBP 2.83

1

onsemi N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-247 HUF75344G3

onsemi N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-247 HUF75344G3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 285 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 20.82mm, Length: 15.87mm

GBP 2.83

1

onsemi N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB HUF75344P3

onsemi N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB HUF75344P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 285 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 16.3mm, Length: 10.67mm

GBP 2.23

1

onsemi N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-247 HUF75344G3

onsemi N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-247 HUF75344G3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 285 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 20.82mm, Length: 15.87mm

GBP 3.32

1

onsemi N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB HUF75344P3

onsemi N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB HUF75344P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 285 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 16.3mm, Length: 10.67mm

GBP 2.63

1

onsemi N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB HUF75344P3

onsemi N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB HUF75344P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 285 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 16.3mm, Length: 10.67mm

GBP 2.38

1

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onsemi N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-247 HUF75344G3

onsemi N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-247 HUF75344G3

onsemi N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB HUF75344P3

onsemi N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-247 HUF75344G3

onsemi N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB HUF75344P3

onsemi N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB HUF75344P3

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