Vishay N-Channel MOSFET, 36 A, 20 V, 8-Pin SOIC SI4186DY-T1-GE3
Vishay N-Channel MOSFET, 36 A, 20 V, 8-Pin SOIC SI4186DY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.55mm