Pricemate

Vishay SIC820ED-T1-GE3, Current Monitor 39-Pin, PowerPAK MLP39

Vishay SIC820ED-T1-GE3, Current Monitor 39-Pin, PowerPAK MLP39, Mounting Type: Surface Mount, Dimensions: 6.1 x 5.1 x 0.8mm, Minimum Input Voltage: 12 V, Product Length: 6.1mm, Product Width: 5.1mm

GBP 4.41

1

Vishay SIC820AED-T1-GE3, Current Monitor 39-Pin, PowerPAK MLP39

Vishay SIC820AED-T1-GE3, Current Monitor 39-Pin, PowerPAK MLP39, Mounting Type: Surface Mount, Dimensions: 6.1 x 5.1 x 0.8mm, Minimum Input Voltage: 12 V, Product Length: 6.1mm, Product Width: 5.1mm

GBP 4.41

1

Vishay SIC830ED-T1-GE3, Current Monitor 39-Pin, PowerPAK MLP39

Vishay SIC830ED-T1-GE3, Current Monitor 39-Pin, PowerPAK MLP39, Mounting Type: Surface Mount, Dimensions: 6.1 x 5.1 x 0.8mm, Maximum Input Voltage: 19 V, Minimum Input Voltage: 12 V, Product Length: 6.1mm, Product Width: 5.1mm

GBP 4.51

1

Vishay SIC830AED-T1-GE3, Current Monitor 39-Pin, PowerPAK MLP39

Vishay SIC830AED-T1-GE3, Current Monitor 39-Pin, PowerPAK MLP39, Mounting Type: Surface Mount, Dimensions: 6.1 x 5.1 x 0.8mm, Maximum Input Voltage: 19 V, Minimum Input Voltage: 12 V, Product Length: 6.1mm, Product Width: 5.1mm

GBP 4.51

1

Vishay N-Channel MOSFET, 39 A, 100 V, 8-Pin PowerPAK 1212-S SISS42LDN-T1-GE3

Vishay N-Channel MOSFET, 39 A, 100 V, 8-Pin PowerPAK 1212-S SISS42LDN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 18 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 57 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.1V

GBP 1.02

1

Vishay N-Channel MOSFET, 39 A, 100 V, 8-Pin PowerPAK 1212-S SISS42LDN-T1-GE3

Vishay N-Channel MOSFET, 39 A, 100 V, 8-Pin PowerPAK 1212-S SISS42LDN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 18 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 57 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.1V

GBP 0.50

1

Vishay N-Channel MOSFET, 39 A, 100 V, 8-Pin PowerPAK 1212-S SISS42LDN-T1-GE3

Vishay N-Channel MOSFET, 39 A, 100 V, 8-Pin PowerPAK 1212-S SISS42LDN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 18 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 57 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.1V

GBP 1.00

1

Vishay 15μF Polypropylene Capacitor PP 700V dc ±5% Tolerance Through Hole MKP1848S Series

Vishay 15μF Polypropylene Capacitor PP 700V dc ±5% Tolerance Through Hole MKP1848S Series, Capacitance: 15µF, Lead Pitch: 37.5mm, Length: 42mm, Depth: 39mm, Height: 18mm, Dimensions: 42 x 39 x 18mm, Dielectric: Polypropylene Film, Equivalent Series Resistance: 7mΩ, Lead Diameter: 1mm, Maximum Operating Temperature: +85°C, MPN: MKP1848S61570JP2C

GBP 4.36

1

Vishay 20μF Polypropylene Capacitor PP 1kV dc ±5% Tolerance Through Hole MKP1848S Series

Vishay 20μF Polypropylene Capacitor PP 1kV dc ±5% Tolerance Through Hole MKP1848S Series, Capacitance: 20µF, Lead Pitch: 52.5mm, Length: 57.5mm, Depth: 39mm, Height: 24mm, Dimensions: 57.5 x 39 x 24mm, Dielectric: Polypropylene Film, Equivalent Series Resistance: 5mΩ, Lead Diameter: 1.2mm, Maximum Operating Temperature: +85°C, MPN: MKP1848S62010JY5F

GBP 4.90

1

Vishay 15μF Polypropylene Capacitor PP 700V dc ±5% Tolerance Through Hole MKP1848S DC-Link Series

Vishay 15μF Polypropylene Capacitor PP 700V dc ±5% Tolerance Through Hole MKP1848S DC-Link Series, Capacitance: 15µF, Lead Pitch: 37.5mm, Length: 42mm, Depth: 39mm, Height: 18mm, Dimensions: 42 x 39 x 18mm, Dielectric: Polypropylene Film, Equivalent Series Resistance: 7mΩ, Lead Diameter: 1mm, Maximum Operating Temperature: +85°C, MPN: MKP1848S61570JP2C

GBP 5.21

1

Vishay 20μF Polypropylene Capacitor PP 1kV dc ±5% Tolerance Through Hole MKP1848S DC-Link Series

Vishay 20μF Polypropylene Capacitor PP 1kV dc ±5% Tolerance Through Hole MKP1848S DC-Link Series, Capacitance: 20µF, Lead Pitch: 52.5mm, Length: 57.5mm, Depth: 39mm, Height: 24mm, Dimensions: 57.5 x 39 x 24mm, Dielectric: Polypropylene Film, Equivalent Series Resistance: 5mΩ, Lead Diameter: 1.2mm, Maximum Operating Temperature: +85°C, MPN: MKP1848S62010JY5F

GBP 5.62

1

Vishay 15μF Polypropylene Capacitor PP 700V dc ±5% Tolerance Through Hole MKP1848S DC-Link Series

Vishay 15μF Polypropylene Capacitor PP 700V dc ±5% Tolerance Through Hole MKP1848S DC-Link Series, Capacitance: 15µF, Lead Pitch: 37.5mm, Length: 42mm, Depth: 39mm, Height: 18mm, Dimensions: 42 x 39 x 18mm, Dielectric: Polypropylene Film, Equivalent Series Resistance: 7mΩ, Lead Diameter: 1mm, Maximum Operating Temperature: +85°C, MPN: MKP1848S61570JP2C

GBP 4.62

1

Vishay 20μF Polypropylene Capacitor PP 1kV dc ±5% Tolerance Through Hole MKP1848S DC-Link Series

Vishay 20μF Polypropylene Capacitor PP 1kV dc ±5% Tolerance Through Hole MKP1848S DC-Link Series, Capacitance: 20µF, Lead Pitch: 52.5mm, Length: 57.5mm, Depth: 39mm, Height: 24mm, Dimensions: 57.5 x 39 x 24mm, Dielectric: Polypropylene Film, Equivalent Series Resistance: 5mΩ, Lead Diameter: 1.2mm, Maximum Operating Temperature: +85°C, MPN: MKP1848S62010JY5F

GBP 5.92

1

Vishay N-Channel MOSFET, 23 A, 40 V, 8-Pin PowerPAK SO SIR418DP-T1-GE3

Vishay N-Channel MOSFET, 23 A, 40 V, 8-Pin PowerPAK SO SIR418DP-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.12mm, Length: 6.25mm

GBP 1.02

1

Vishay N-Channel MOSFET, 18 A, 30 V, 8-Pin PowerPAK 1212 SI7114ADN-T1-GE3

Vishay N-Channel MOSFET, 18 A, 30 V, 8-Pin PowerPAK 1212 SI7114ADN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9.8 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.07mm, Length: 3.15mm

GBP 0.21

1

Vishay P-Channel MOSFET, 50 A, 20 V, 8-Pin PowerPAK SO SIR401DP-T1-GE3

Vishay P-Channel MOSFET, 50 A, 20 V, 8-Pin PowerPAK SO SIR401DP-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7.7 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1.12mm, Length: 6.25mm

GBP 0.86

1

Vishay N-Channel MOSFET, 23 A, 40 V, 8-Pin PowerPAK SO SIR418DP-T1-GE3

Vishay N-Channel MOSFET, 23 A, 40 V, 8-Pin PowerPAK SO SIR418DP-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.12mm, Length: 6.25mm

GBP 0.56

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Height: 1.12mm, Length: 3.4mm

GBP 0.38

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Height: 1.12mm, Length: 3.4mm

GBP 0.78

1

Vishay N-Channel MOSFET, 35 A, 30 V, 8-Pin PowerPAK 1212-SH SiSH114ADN-T1-GE3

Vishay N-Channel MOSFET, 35 A, 30 V, 8-Pin PowerPAK 1212-SH SiSH114ADN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9.8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.55

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Height: 1.12mm, Length: 3.4mm

GBP 0.59

1

Vishay P-Channel MOSFET, 50 A, 20 V, 8-Pin PowerPAK SO SIR401DP-T1-GE3

Vishay P-Channel MOSFET, 50 A, 20 V, 8-Pin PowerPAK SO SIR401DP-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7.7 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1.12mm, Length: 6.25mm

GBP 0.53

1

Vishay P-Channel MOSFET, 50 A, 20 V, 8-Pin PowerPAK SO SIR401DP-T1-GE3

Vishay P-Channel MOSFET, 50 A, 20 V, 8-Pin PowerPAK SO SIR401DP-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7.7 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1.12mm, Length: 6.25mm

GBP 0.43

1

Vishay N-Channel MOSFET, 35 A, 30 V, 8-Pin PowerPAK 1212-SH SiSH114ADN-T1-GE3

Vishay N-Channel MOSFET, 35 A, 30 V, 8-Pin PowerPAK 1212-SH SiSH114ADN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9.8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.17

1

Vishay N-Channel MOSFET, 18 A, 30 V, 8-Pin PowerPAK 1212 SI7114ADN-T1-GE3

Vishay N-Channel MOSFET, 18 A, 30 V, 8-Pin PowerPAK 1212 SI7114ADN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9.8 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.07mm, Length: 3.15mm

GBP 0.21

1

Brand

Gender

Merchant

Price (EUR)

Vishay SIC820ED-T1-GE3, Current Monitor 39-Pin, PowerPAK MLP39

Vishay SIC820AED-T1-GE3, Current Monitor 39-Pin, PowerPAK MLP39

Vishay SIC830ED-T1-GE3, Current Monitor 39-Pin, PowerPAK MLP39

Vishay SIC830AED-T1-GE3, Current Monitor 39-Pin, PowerPAK MLP39

Vishay N-Channel MOSFET, 39 A, 100 V, 8-Pin PowerPAK 1212-S SISS42LDN-T1-GE3

Vishay N-Channel MOSFET, 39 A, 100 V, 8-Pin PowerPAK 1212-S SISS42LDN-T1-GE3

Vishay N-Channel MOSFET, 39 A, 100 V, 8-Pin PowerPAK 1212-S SISS42LDN-T1-GE3

Vishay 15μF Polypropylene Capacitor PP 700V dc ±5% Tolerance Through Hole MKP1848S Series

Vishay 20μF Polypropylene Capacitor PP 1kV dc ±5% Tolerance Through Hole MKP1848S Series

Vishay 15μF Polypropylene Capacitor PP 700V dc ±5% Tolerance Through Hole MKP1848S DC-Link Series

Vishay 20μF Polypropylene Capacitor PP 1kV dc ±5% Tolerance Through Hole MKP1848S DC-Link Series

Vishay 15μF Polypropylene Capacitor PP 700V dc ±5% Tolerance Through Hole MKP1848S DC-Link Series

Vishay 20μF Polypropylene Capacitor PP 1kV dc ±5% Tolerance Through Hole MKP1848S DC-Link Series

Vishay N-Channel MOSFET, 23 A, 40 V, 8-Pin PowerPAK SO SIR418DP-T1-GE3

Vishay N-Channel MOSFET, 18 A, 30 V, 8-Pin PowerPAK 1212 SI7114ADN-T1-GE3

Vishay P-Channel MOSFET, 50 A, 20 V, 8-Pin PowerPAK SO SIR401DP-T1-GE3

Vishay N-Channel MOSFET, 23 A, 40 V, 8-Pin PowerPAK SO SIR418DP-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay N-Channel MOSFET, 35 A, 30 V, 8-Pin PowerPAK 1212-SH SiSH114ADN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay P-Channel MOSFET, 50 A, 20 V, 8-Pin PowerPAK SO SIR401DP-T1-GE3

Vishay P-Channel MOSFET, 50 A, 20 V, 8-Pin PowerPAK SO SIR401DP-T1-GE3

Vishay N-Channel MOSFET, 35 A, 30 V, 8-Pin PowerPAK 1212-SH SiSH114ADN-T1-GE3

Vishay N-Channel MOSFET, 18 A, 30 V, 8-Pin PowerPAK 1212 SI7114ADN-T1-GE3

Powered by Cobiro