Pricemate

ROHM N-Channel MOSFET, 39 A, 30 V, 8-Pin HSMT RQ3E150BNTB

ROHM N-Channel MOSFET, 39 A, 30 V, 8-Pin HSMT RQ3E150BNTB, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 17 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.27

1

ROHM P-Channel MOSFET, 39 A, 30 V, 8-Pin HSMT RQ3E120ATTB

ROHM P-Channel MOSFET, 39 A, 30 V, 8-Pin HSMT RQ3E120ATTB, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 11.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 20 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V

GBP 0.36

1

ROHM DTD123EKT146 NPN Digital Transistor, 3-Pin SMT

ROHM DTD123EKT146 NPN Digital Transistor, 3-Pin SMT, Mounting Type: Surface Mount, Transistor Configuration: Single, Dimensions: 2.9 x 1.6 x 1.1mm, Minimum DC Current Gain: 39, Length: 2.9mm, Maximum Operating Temperature: +150 °C

GBP 0.32

1

ROHM P-Channel MOSFET, 7 A, 45 V, 8-Pin SOP RSH070P05GZETB

ROHM P-Channel MOSFET, 7 A, 45 V, 8-Pin SOP RSH070P05GZETB, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 39 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 1.17

1

ROHM N-Channel MOSFET, 68 A, 60 V, 8-Pin HSOP RS1L180GNTB

ROHM N-Channel MOSFET, 68 A, 60 V, 8-Pin HSOP RS1L180GNTB, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 1.42

1

ROHM N-Channel MOSFET, 7 A, 30 V, 8-Pin HSMT RQ3E070BNTB

ROHM N-Channel MOSFET, 7 A, 30 V, 8-Pin HSMT RQ3E070BNTB, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 39 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V

GBP 0.23

1

Brand

Gender

Merchant