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MagnaChip N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MDF16N50GTH

MagnaChip N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MDF16N50GTH, Mounting Type: Through Hole, Maximum Drain Source Resistance: 350 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 49.4 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V, Height: 16.13mm

GBP 0.54

1

MagnaChip N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MDF16N50GTH

MagnaChip N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MDF16N50GTH, Mounting Type: Through Hole, Maximum Drain Source Resistance: 350 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 49.4 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V, Height: 16.13mm

GBP 0.79

1

MagnaChip N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MDF16N50GTH

MagnaChip N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MDF16N50GTH, Mounting Type: Through Hole, Maximum Drain Source Resistance: 350 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 49.4 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V, Height: 16.13mm

GBP 0.55

1

MagnaChip N-Channel MOSFET, 11 A, 660 V, 3-Pin TO-220F MDF11N60BTH

MagnaChip N-Channel MOSFET, 11 A, 660 V, 3-Pin TO-220F MDF11N60BTH, Mounting Type: Through Hole, Maximum Drain Source Resistance: 550 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 49 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V, Height: 16.13mm

GBP 0.74

1

MagnaChip N-Channel MOSFET, 11 A, 660 V, 3-Pin TO-220F MDF11N60BTH

MagnaChip N-Channel MOSFET, 11 A, 660 V, 3-Pin TO-220F MDF11N60BTH, Mounting Type: Through Hole, Maximum Drain Source Resistance: 550 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 49 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V, Height: 16.13mm

GBP 0.81

1

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MagnaChip N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MDF16N50GTH

MagnaChip N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MDF16N50GTH

MagnaChip N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MDF16N50GTH

MagnaChip N-Channel MOSFET, 11 A, 660 V, 3-Pin TO-220F MDF11N60BTH

MagnaChip N-Channel MOSFET, 11 A, 660 V, 3-Pin TO-220F MDF11N60BTH

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