Infineon P-Channel MOSFET, 39.6 A, 30 V, 8-Pin PG-TSDSON-8 BSZ180P03NS3GATMA1 Infineon P-Channel MOSFET, 39.6 A, 30 V, 8-Pin PG-TSDSON-8 BSZ180P03NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.018 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.1V, Series: OptiMOS P3 GBP 0.55 1
Infineon P-Channel MOSFET, 39.6 A, 30 V, 8-Pin PG-TSDSON-8 BSZ180P03NS3GATMA1 Infineon P-Channel MOSFET, 39.6 A, 30 V, 8-Pin PG-TSDSON-8 BSZ180P03NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.018 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.1V, Series: OptiMOS P3 GBP 0.28 1
