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Infineon N-Channel MOSFET, 55 A, 850 V, 3-Pin TO-247 SPW55N80C3FKSA1

Infineon N-Channel MOSFET, 55 A, 850 V, 3-Pin TO-247 SPW55N80C3FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 85 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.95V, Height: 5.21mm, Length: 16.13mm

GBP 10.41

1

Infineon AUIRGP4063D IGBT, 96 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon AUIRGP4063D IGBT, 96 A 600 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 330 W, Switching Speed: 30kHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.31 x 20.7mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 10.00

1

Infineon AUIRGP4063D IGBT, 96 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon AUIRGP4063D IGBT, 96 A 600 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 330 W, Switching Speed: 30kHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.31 x 20.7mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 11.35

1

Infineon IRGP4066D-EPBF IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon IRGP4066D-EPBF IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 454 W, Switching Speed: 30kHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.13 x 20.7mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 9.79

1

Infineon AUIRGP4066D1-E IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon AUIRGP4066D1-E IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 454 W, Switching Speed: 30kHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.13 x 20.7mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 16.06

1

Infineon IRGPS46160DPBF IGBT, 240 A 600 V, 3-Pin Super-247, Through Hole

Infineon IRGPS46160DPBF IGBT, 240 A 600 V, 3-Pin Super-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 750 W, Switching Speed: 8 to 30kHz, Transistor Configuration: Single, Dimensions: 16.1 x 5.5 x 20.8mm, Energy Rating: 500mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 14.69

1

Infineon IRGPS46160DPBF IGBT, 240 A 600 V, 3-Pin Super-247, Through Hole

Infineon IRGPS46160DPBF IGBT, 240 A 600 V, 3-Pin Super-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 750 W, Switching Speed: 8 to 30kHz, Transistor Configuration: Single, Dimensions: 16.1 x 5.5 x 20.8mm, Energy Rating: 500mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 16.66

1

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Infineon N-Channel MOSFET, 55 A, 850 V, 3-Pin TO-247 SPW55N80C3FKSA1

Infineon AUIRGP4063D IGBT, 96 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon AUIRGP4063D IGBT, 96 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon IRGP4066D-EPBF IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon AUIRGP4066D1-E IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon IRGPS46160DPBF IGBT, 240 A 600 V, 3-Pin Super-247, Through Hole

Infineon IRGPS46160DPBF IGBT, 240 A 600 V, 3-Pin Super-247, Through Hole

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