Infineon N-Channel MOSFET, 36 A, 200 V, 8-Pin TDSON BSC320N20NS3GATMA1
Infineon N-Channel MOSFET, 36 A, 200 V, 8-Pin TDSON BSC320N20NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 32 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm