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Infineon FS3L40R07W2H5FB11BOMA1 IGBT Module 650 V EasyPACK 2B, Through Hole

Infineon FS3L40R07W2H5FB11BOMA1 IGBT Module 650 V EasyPACK 2B, Through Hole, Maximum Gate Emitter Voltage: ±20.0V, Number of Transistors: 12

GBP 66.02

1

Infineon FS3L40R07W2H5FB11BOMA1 IGBT Module 650 V EasyPACK 2B, Through Hole

Infineon FS3L40R07W2H5FB11BOMA1 IGBT Module 650 V EasyPACK 2B, Through Hole, Maximum Gate Emitter Voltage: ±20.0V, Number of Transistors: 12

GBP 61.93

1

Infineon, PVDZ172NPBF MOSFET Output Phototransistor, Through Hole, 8-Pin DIP

Infineon MOSFET Output Phototransistor, Through Hole, 8-Pin DIP, Number of Channels: 1, Typical Rise Time: 2ms, Maximum Input Current: 25 mA, Isolation Voltage: 4000 Vrms, Typical Fall Time: 0.5ms, MPN: PVDZ172NPBF

GBP 8.16

1

Infineon, PVDZ172NPBF MOSFET Output Phototransistor, Through Hole, 8-Pin DIP

Infineon MOSFET Output Phototransistor, Through Hole, 8-Pin DIP, Number of Channels: 1, Typical Rise Time: 2ms, Maximum Input Current: 25 mA, Isolation Voltage: 4000 Vrms, Typical Fall Time: 0.5ms, MPN: PVDZ172NPBF

GBP 5.58

1

Infineon, PVDZ172NPBF MOSFET Output Phototransistor, Through Hole, 8-Pin DIP

Infineon MOSFET Output Phototransistor, Through Hole, 8-Pin DIP, Number of Channels: 1, Typical Rise Time: 2ms, Maximum Input Current: 25 mA, Isolation Voltage: 4000 Vrms, Typical Fall Time: 0.5ms, MPN: PVDZ172NPBF

GBP 7.37

1

Infineon, PVD1352NPBF DC Input MOSFET Output Phototransistor, Through Hole, 8-Pin DIP

Infineon DC Input MOSFET Output Phototransistor, Through Hole, 8-Pin DIP, Number of Channels: 1, Typical Rise Time: 150µs, Maximum Input Current: 25 mA, Isolation Voltage: 4000 Vrms, Typical Fall Time: 125µs, MPN: PVD1352NPBF

GBP 5.62

1

Infineon, PVD1352NPBF DC Input MOSFET Output Phototransistor, Through Hole, 8-Pin DIP

Infineon DC Input MOSFET Output Phototransistor, Through Hole, 8-Pin DIP, Number of Channels: 1, Typical Rise Time: 150µs, Maximum Input Current: 25 mA, Isolation Voltage: 4 kVrms, Typical Fall Time: 125µs, MPN: PVD1352NPBF

GBP 4.45

1

Infineon, PVD1352NPBF DC Input MOSFET Output Phototransistor, Through Hole, 8-Pin DIP

Infineon DC Input MOSFET Output Phototransistor, Through Hole, 8-Pin DIP, Number of Channels: 1, Typical Rise Time: 150µs, Maximum Input Current: 25 mA, Isolation Voltage: 4000 Vrms, Typical Fall Time: 125µs, MPN: PVD1352NPBF

GBP 5.09

1

Infineon, PVA1354NPBF DC Input MOSFET Output Optocoupler, Through Hole, 4-Pin DIP

Infineon DC Input MOSFET Output Optocoupler, Through Hole, 4-Pin DIP, Number of Channels: 1, Typical Rise Time: 150µs, Maximum Input Current: 25 mA dc, Isolation Voltage: 4000 Vrms, Typical Fall Time: 125µs, MPN: PVA1354NPBF

GBP 5.79

1

Infineon, PVA1354NPBF DC Input MOSFET Output Optocoupler, Through Hole, 4-Pin DIP

Infineon DC Input MOSFET Output Optocoupler, Through Hole, 4-Pin DIP, Number of Channels: 1, Typical Rise Time: 150µs, Maximum Input Current: 25 mA dc, Isolation Voltage: 4 kVrms, Typical Fall Time: 125µs, MPN: PVA1354NPBF

GBP 4.59

1

Infineon, PVA1354NPBF DC Input MOSFET Output Optocoupler, Through Hole, 4-Pin DIP

Infineon DC Input MOSFET Output Optocoupler, Through Hole, 4-Pin DIP, Number of Channels: 1, Typical Rise Time: 150µs, Maximum Input Current: 25 mA dc, Isolation Voltage: 4000 Vrms, Typical Fall Time: 125µs, MPN: PVA1354NPBF

GBP 4.47

1

Infineon IRGP4062DPBF IGBT, 48 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon IRGP4062DPBF IGBT, 48 A 600 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.71

1

Infineon IRGP4062DPBF IGBT, 48 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon IRGP4062DPBF IGBT, 48 A 600 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.54

1

Infineon IRGB4056DPBF IGBT, 24 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon IRGB4056DPBF IGBT, 24 A 600 V, 3-Pin TO-220AB, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 10.67 x 4.83 x 9.02mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 2.49

1

Infineon IRG4BC40UPBF IGBT, 40 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon IRG4BC40UPBF IGBT, 40 A 600 V, 3-Pin TO-220AB, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 10.54 x 4.69 x 8.77mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 2.88

1

Infineon IRG4PC40SPBF IGBT, 60 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4PC40SPBF IGBT, 60 A 600 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.53

1

Infineon IRG4BC30WPBF IGBT, 23 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon IRG4BC30WPBF IGBT, 23 A 600 V, 3-Pin TO-220AB, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 10.54 x 4.69 x 8.77mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 2.22

1

Infineon IRG4BC40KPBF IGBT, 42 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon IRG4BC40KPBF IGBT, 42 A 600 V, 3-Pin TO-220AB, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 10.54 x 4.69 x 8.77mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 2.57

1

Infineon IRG4PC40FPBF IGBT, 49 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4PC40FPBF IGBT, 49 A 600 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.10

1

Infineon IRGB20B60PD1PBF IGBT, 40 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon IRGB20B60PD1PBF IGBT, 40 A 600 V, 3-Pin TO-220AB, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 10.54 x 4.69 x 8.77mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 2.62

1

Infineon IRG4PC40UDPBF IGBT, 40 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4PC40UDPBF IGBT, 40 A 600 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.00

1

Infineon IRG4PH50UPBF IGBT, 45 A 1200 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4PH50UPBF IGBT, 45 A 1200 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.04

1

Infineon IRG4PH50SPBF IGBT, 57 A 1200 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4PH50SPBF IGBT, 57 A 1200 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.82

1

Infineon IRGP4063DPBF IGBT, 96 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon IRGP4063DPBF IGBT, 96 A 600 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 6.89

1

Infineon IRG4PH40KDPBF IGBT, 30 A 1200 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4PH40KDPBF IGBT, 30 A 1200 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.69

1

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Infineon FS3L40R07W2H5FB11BOMA1 IGBT Module 650 V EasyPACK 2B, Through Hole

Infineon FS3L40R07W2H5FB11BOMA1 IGBT Module 650 V EasyPACK 2B, Through Hole

Infineon, PVDZ172NPBF MOSFET Output Phototransistor, Through Hole, 8-Pin DIP

Infineon, PVDZ172NPBF MOSFET Output Phototransistor, Through Hole, 8-Pin DIP

Infineon, PVDZ172NPBF MOSFET Output Phototransistor, Through Hole, 8-Pin DIP

Infineon, PVD1352NPBF DC Input MOSFET Output Phototransistor, Through Hole, 8-Pin DIP

Infineon, PVD1352NPBF DC Input MOSFET Output Phototransistor, Through Hole, 8-Pin DIP

Infineon, PVD1352NPBF DC Input MOSFET Output Phototransistor, Through Hole, 8-Pin DIP

Infineon, PVA1354NPBF DC Input MOSFET Output Optocoupler, Through Hole, 4-Pin DIP

Infineon, PVA1354NPBF DC Input MOSFET Output Optocoupler, Through Hole, 4-Pin DIP

Infineon, PVA1354NPBF DC Input MOSFET Output Optocoupler, Through Hole, 4-Pin DIP

Infineon IRGP4062DPBF IGBT, 48 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon IRGP4062DPBF IGBT, 48 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon IRGB4056DPBF IGBT, 24 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon IRG4BC40UPBF IGBT, 40 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon IRG4PC40SPBF IGBT, 60 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4BC30WPBF IGBT, 23 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon IRG4BC40KPBF IGBT, 42 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon IRG4PC40FPBF IGBT, 49 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon IRGB20B60PD1PBF IGBT, 40 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon IRG4PC40UDPBF IGBT, 40 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4PH50UPBF IGBT, 45 A 1200 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4PH50SPBF IGBT, 57 A 1200 V, 3-Pin TO-247AC, Through Hole

Infineon IRGP4063DPBF IGBT, 96 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4PH40KDPBF IGBT, 30 A 1200 V, 3-Pin TO-247AC, Through Hole

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