Pricemate

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 19.91 x 5.03 x 20.88mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 6.31

1

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 19.91mm, Width: 5.03mm, Height: 20.88mm, Dimensions: 19.91 x 5.03 x 20.88mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 7.56

1

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXTK102N65X2

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXTK102N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 8.17

1

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.26mm

GBP 6.49

1

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.26mm

GBP 6.39

1

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.26mm

GBP 8.69

1

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXFH50N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXFH50N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 5.45

1

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin TO-264 IXFK80N60P3

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin TO-264 IXFK80N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 70 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 8.54

1

IXYS N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3P IXFQ60N50P3

IXYS N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3P IXFQ60N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.3mm, Length: 15.8mm

GBP 4.90

1

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 650 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 5.84

1

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 68 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 8.04

1

IXYS N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-3P IXFQ34N50P3

IXYS N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-3P IXFQ34N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 175 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 695 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.3mm, Length: 15.8mm

GBP 4.56

1

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 5.1mm, Length: 16.05mm

GBP 5.77

1

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 170 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 540 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 5.51

1

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXFH50N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXFH50N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 5.17

1

IXYS N-Channel MOSFET, 98 A, 500 V, 3-Pin TO-264 IXFK98N50P3

IXYS N-Channel MOSFET, 98 A, 500 V, 3-Pin TO-264 IXFK98N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 50 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 8.77

1

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXFH50N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXFH50N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 5.45

1

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 68 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 7.61

1

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 5.1mm, Length: 16.05mm

GBP 6.10

1

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 95 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 7.47

1

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 5.1mm, Length: 16.05mm

GBP 5.56

1

IXYS N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-3P IXFQ34N50P3

IXYS N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-3P IXFQ34N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 175 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 695 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.3mm, Length: 15.8mm

GBP 4.51

1

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 650 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 6.82

1

IXYS N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-247 IXFH60N50P3

IXYS N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-247 IXFH60N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 5.18

1

IXYS N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-3P IXFQ34N50P3

IXYS N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-3P IXFQ34N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 175 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 695 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.3mm, Length: 15.8mm

GBP 4.81

1

Brand

Gender

Merchant

Price (EUR)

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXTK102N65X2

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXFH50N60P3

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin TO-264 IXFK80N60P3

IXYS N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3P IXFQ60N50P3

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3

IXYS N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-3P IXFQ34N50P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXFH50N60P3

IXYS N-Channel MOSFET, 98 A, 500 V, 3-Pin TO-264 IXFK98N50P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXFH50N60P3

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3

IXYS N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-3P IXFQ34N50P3

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P

IXYS N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-247 IXFH60N50P3

IXYS N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-3P IXFQ34N50P3

Powered by Cobiro