Pricemate

IXYS N-Channel MOSFET, 76 A, 650 V, 4-Pin SOT-227B IXTN102N65X2

IXYS N-Channel MOSFET, 76 A, 650 V, 4-Pin SOT-227B IXTN102N65X2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 17.77

1

IXYS N-Channel MOSFET, 17 A, 1200 V, 3-Pin TO-264 IXTK17N120L

IXYS N-Channel MOSFET, 17 A, 1200 V, 3-Pin TO-264 IXTK17N120L, Mounting Type: Through Hole, Maximum Drain Source Resistance: 990 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 40.70

1

IXYS N-Channel MOSFET, 82 A, 500 V, 4-Pin SOT-227B IXFN100N50Q3

IXYS N-Channel MOSFET, 82 A, 500 V, 4-Pin SOT-227B IXFN100N50Q3, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 49 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 960 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.23mm

GBP 33.12

1

IXYS N-Channel MOSFET, 37 A, 800 V, 4-Pin SOT-227B IXFN44N80Q3

IXYS N-Channel MOSFET, 37 A, 800 V, 4-Pin SOT-227B IXFN44N80Q3, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 780 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.23mm

GBP 35.10

1

IXYS N-Channel MOSFET, 22 A, 1000 V, 3-Pin TO-264 IXTK22N100L

IXYS N-Channel MOSFET, 22 A, 1000 V, 3-Pin TO-264 IXTK22N100L, Mounting Type: Through Hole, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 26.22

1

IXYS N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXFK26N120P

IXYS N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXFK26N120P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 460 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 960 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 20.39

1

IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227B IXTN22N100L

IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227B IXTN22N100L, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.2mm

GBP 33.09

1

IXYS N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXFK26N120P

IXYS N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXFK26N120P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 460 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 960 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 19.19

1

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 154 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 18.55

1

IXYS N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227B IXFN60N80P

IXYS N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227B IXFN60N80P, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.23mm

GBP 21.80

1

IXYS N-Channel MOSFET, 28 A, 1000 V, 4-Pin SOT-227B IXFN32N100Q3

IXYS N-Channel MOSFET, 28 A, 1000 V, 4-Pin SOT-227B IXFN32N100Q3, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 780 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.23mm

GBP 34.43

1

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin TO-264 IXFK32N100Q3

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin TO-264 IXFK32N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 20.75

1

IXYS N-Channel MOSFET, 112 A, 500 V, 4-Pin SOT-227B IXFN132N50P3

IXYS N-Channel MOSFET, 112 A, 500 V, 4-Pin SOT-227B IXFN132N50P3, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 39 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.5 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.23mm

GBP 19.73

1

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 21.14

1

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 154 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 18.55

1

IXYS N-Channel MOSFET, 38 A, 1000 V, 4-Pin SOT-227B IXFN44N100Q3

IXYS N-Channel MOSFET, 38 A, 1000 V, 4-Pin SOT-227B IXFN44N100Q3, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 220 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 960 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.23mm

GBP 33.32

1

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin TO-264 IXFK32N100Q3

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin TO-264 IXFK32N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 24.38

1

IXYS N-Channel MOSFET, 37 A, 800 V, 4-Pin SOT-227B IXFN44N80Q3

IXYS N-Channel MOSFET, 37 A, 800 V, 4-Pin SOT-227B IXFN44N80Q3, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 780 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.23mm

GBP 34.19

1

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 220 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 29.68

1

IXYS N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227B IXFN110N60P3

IXYS N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227B IXFN110N60P3, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 56 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.5 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.23mm

GBP 19.81

1

IXYS N-Channel MOSFET, 46 A, 500 V, 4-Pin SOT-227B IXTN46N50L

IXYS N-Channel MOSFET, 46 A, 500 V, 4-Pin SOT-227B IXTN46N50L, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 160 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.2mm

GBP 33.09

1

IXYS N-Channel MOSFET, 112 A, 500 V, 4-Pin SOT-227B IXFN132N50P3

IXYS N-Channel MOSFET, 112 A, 500 V, 4-Pin SOT-227B IXFN132N50P3, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 39 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.5 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.23mm

GBP 20.02

1

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin TO-264 IXFK32N100Q3

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin TO-264 IXFK32N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 21.46

1

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 22.11

1

IXYS N-Channel MOSFET, 46 A, 500 V, 4-Pin SOT-227B IXTN46N50L

IXYS N-Channel MOSFET, 46 A, 500 V, 4-Pin SOT-227B IXTN46N50L, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 160 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.2mm

GBP 32.23

1

Brand

Gender

Merchant

Price (EUR)

IXYS N-Channel MOSFET, 76 A, 650 V, 4-Pin SOT-227B IXTN102N65X2

IXYS N-Channel MOSFET, 17 A, 1200 V, 3-Pin TO-264 IXTK17N120L

IXYS N-Channel MOSFET, 82 A, 500 V, 4-Pin SOT-227B IXFN100N50Q3

IXYS N-Channel MOSFET, 37 A, 800 V, 4-Pin SOT-227B IXFN44N80Q3

IXYS N-Channel MOSFET, 22 A, 1000 V, 3-Pin TO-264 IXTK22N100L

IXYS N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXFK26N120P

IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227B IXTN22N100L

IXYS N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXFK26N120P

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3

IXYS N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227B IXFN60N80P

IXYS N-Channel MOSFET, 28 A, 1000 V, 4-Pin SOT-227B IXFN32N100Q3

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin TO-264 IXFK32N100Q3

IXYS N-Channel MOSFET, 112 A, 500 V, 4-Pin SOT-227B IXFN132N50P3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3

IXYS N-Channel MOSFET, 38 A, 1000 V, 4-Pin SOT-227B IXFN44N100Q3

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin TO-264 IXFK32N100Q3

IXYS N-Channel MOSFET, 37 A, 800 V, 4-Pin SOT-227B IXFN44N80Q3

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3

IXYS N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227B IXFN110N60P3

IXYS N-Channel MOSFET, 46 A, 500 V, 4-Pin SOT-227B IXTN46N50L

IXYS N-Channel MOSFET, 112 A, 500 V, 4-Pin SOT-227B IXFN132N50P3

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin TO-264 IXFK32N100Q3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 46 A, 500 V, 4-Pin SOT-227B IXTN46N50L

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