Pricemate

IXYS ±120 mA rms/mA dc, 250 mA dc SPNO Solid State Relay, AC/DC, Surface Mount, MOSFET, 600 V Maximum Load

IXYS ±120 mA rms/mA dc, 250 mA dc SPNO Solid State Relay, AC/DC, Surface Mount, MOSFET, 600 V Maximum Load, Terminal Type: PCB Pin, Package Style: Small - 6 Pin, Maximum Turn On Time: 2 ms, Dimensions: 9.652 x 6.35 x 3.302mm, Capacitance: 18pF, Depth: 6.35mm, Height: 3.3mm, Length: 9.65mm, Load Voltage Range: Maximum of 600V, MPN: CPC1563GS

GBP 1.83

1

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 540 W, Switching Speed: 40kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.30

1

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 300 W, Switching Speed: 40kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 8.16

1

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 300 W, Switching Speed: 40kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.94

1

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 540 W, Switching Speed: 40kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.08

1

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 56 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.89 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 13.49

1

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 56 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.89 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 13.08

1

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 70 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 9.27

1

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 22.11

1

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 23.17

1

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 154 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 16.18

1

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 154 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 18.55

1

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 154 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 18.55

1

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 56 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.89 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 12.63

1

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 70 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 8.73

1

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 21.14

1

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 70 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 9.19

1

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 300 W, Switching Speed: 40kHz, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C

GBP 6.59

1

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 540 W, Switching Speed: 40kHz, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C

GBP 3.57

1

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 19.91 x 5.03 x 20.88mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 6.31

1

IXYS N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2

IXYS N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 5.7mm

GBP 18.83

1

IXYS N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2

IXYS N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 5.7mm

GBP 19.21

1

IXYS N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2

IXYS N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 5.7mm

GBP 19.50

1

IXYS N-Channel MOSFET, 50 A, 600 V, 9-Pin SMPD MKE38RK600DFELB

IXYS N-Channel MOSFET, 50 A, 600 V, 9-Pin SMPD MKE38RK600DFELB, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1V, Height: 5.5mm, Length: 25mm

GBP 17.23

1

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 95 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 7.47

1

Brand

Gender

Merchant

Price (EUR)

IXYS ±120 mA rms/mA dc, 250 mA dc SPNO Solid State Relay, AC/DC, Surface Mount, MOSFET, 600 V Maximum Load

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole

IXYS N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2

IXYS N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2

IXYS N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2

IXYS N-Channel MOSFET, 50 A, 600 V, 9-Pin SMPD MKE38RK600DFELB

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3

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