Pricemate

IXYS N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T

IXYS N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 570 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.3V, Height: 5.7mm

GBP 21.02

1

IXYS N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T

IXYS N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 570 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.3V, Height: 5.7mm

GBP 25.78

1

IXYS N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T

IXYS N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 570 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.3V, Height: 5.7mm

GBP 26.16

1

IXYS N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T

IXYS N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T, Mounting Type: Through Hole, Maximum Drain Source Resistance: 24 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 694 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 21.46mm

GBP 4.97

1

IXYS N-Channel MOSFET, 80 A, 250 V, 3-Pin TO-247 IXFH80N25X3

IXYS N-Channel MOSFET, 80 A, 250 V, 3-Pin TO-247 IXFH80N25X3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.4V

GBP 5.81

1

IXYS N-Channel MOSFET, 80 A, 250 V, 3-Pin TO-247 IXFH80N25X3

IXYS N-Channel MOSFET, 80 A, 250 V, 3-Pin TO-247 IXFH80N25X3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.4V

GBP 5.50

1

IXYS N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T

IXYS N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T, Mounting Type: Through Hole, Maximum Drain Source Resistance: 24 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 694 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 21.46mm

GBP 4.71

1

IXYS N-Channel MOSFET, 80 A, 250 V, 2 + Tab-Pin D2PAK IXFA80N25X3

IXYS N-Channel MOSFET, 80 A, 250 V, 2 + Tab-Pin D2PAK IXFA80N25X3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.4V

GBP 4.55

1

IXYS N-Channel MOSFET, 80 A, 250 V, 2 + Tab-Pin D2PAK IXFA80N25X3

IXYS N-Channel MOSFET, 80 A, 250 V, 2 + Tab-Pin D2PAK IXFA80N25X3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.4V

GBP 4.81

1

IXYS N-Channel MOSFET, 80 A, 250 V, 3 + Tab-Pin TO-220 IXFP80N25X3

IXYS N-Channel MOSFET, 80 A, 250 V, 3 + Tab-Pin TO-220 IXFP80N25X3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.4V

GBP 4.42

1

IXYS N-Channel MOSFET, 80 A, 250 V, 3 + Tab-Pin TO-220 IXFP80N25X3

IXYS N-Channel MOSFET, 80 A, 250 V, 3 + Tab-Pin TO-220 IXFP80N25X3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.4V

GBP 4.68

1

IXYS N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3

IXYS N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 14.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.89 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 26.59mm, Length: 20.29mm

GBP 14.07

1

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 85 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 15.06

1

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.34mm, Length: 16.13mm

GBP 8.93

1

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 440 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 15.06

1

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 440 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 15.53

1

IXYS N-Channel MOSFET, 32 A, 800 V, 3-Pin PLUS247 IXFX32N80Q3

IXYS N-Channel MOSFET, 32 A, 800 V, 3-Pin PLUS247 IXFX32N80Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 270 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 15.74

1

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin PLUS247 IXFX32N100Q3

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin PLUS247 IXFX32N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 12.52

1

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXFX150N30P3

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXFX150N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.34mm, Length: 16.13mm

GBP 11.79

1

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXFX150N30P3

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXFX150N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.34mm, Length: 16.13mm

GBP 10.87

1

IXYS N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3

IXYS N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 14.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.89 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 26.59mm, Length: 20.29mm

GBP 16.12

1

IXYS N-Channel MOSFET, 32 A, 800 V, 3-Pin PLUS247 IXFX32N80Q3

IXYS N-Channel MOSFET, 32 A, 800 V, 3-Pin PLUS247 IXFX32N80Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 270 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 16.00

1

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 70 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 9.19

1

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 21.14

1

IXYS N-Channel MOSFET, 98 A, 500 V, 3-Pin PLUS247 IXFX98N50P3

IXYS N-Channel MOSFET, 98 A, 500 V, 3-Pin PLUS247 IXFX98N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 50 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 9.19

1

Brand

Gender

Merchant

Price (EUR)

IXYS N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T

IXYS N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T

IXYS N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T

IXYS N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T

IXYS N-Channel MOSFET, 80 A, 250 V, 3-Pin TO-247 IXFH80N25X3

IXYS N-Channel MOSFET, 80 A, 250 V, 3-Pin TO-247 IXFH80N25X3

IXYS N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T

IXYS N-Channel MOSFET, 80 A, 250 V, 2 + Tab-Pin D2PAK IXFA80N25X3

IXYS N-Channel MOSFET, 80 A, 250 V, 2 + Tab-Pin D2PAK IXFA80N25X3

IXYS N-Channel MOSFET, 80 A, 250 V, 3 + Tab-Pin TO-220 IXFP80N25X3

IXYS N-Channel MOSFET, 80 A, 250 V, 3 + Tab-Pin TO-220 IXFP80N25X3

IXYS N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3

IXYS N-Channel MOSFET, 32 A, 800 V, 3-Pin PLUS247 IXFX32N80Q3

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin PLUS247 IXFX32N100Q3

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXFX150N30P3

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXFX150N30P3

IXYS N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3

IXYS N-Channel MOSFET, 32 A, 800 V, 3-Pin PLUS247 IXFX32N80Q3

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 98 A, 500 V, 3-Pin PLUS247 IXFX98N50P3

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