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IXYS IXYH20N120C3D1 IGBT, 36 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH20N120C3D1 IGBT, 36 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 230 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 8.53

1

IXYS IXYH20N120C3D1 IGBT, 36 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH20N120C3D1 IGBT, 36 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 230 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 9.89

1

IXYS IXYH20N120C3D1 IGBT, 36 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH20N120C3D1 IGBT, 36 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 230 W, Switching Speed: 50kHz, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C

GBP 9.89

1

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 650 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 6.43

1

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 170 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 540 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 5.40

1

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 650 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 6.82

1

IXYS N-Channel MOSFET, 36 A, 1000 V, 4-Pin SOT-227B IXFN36N100

IXYS N-Channel MOSFET, 36 A, 1000 V, 4-Pin SOT-227B IXFN36N100, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.6mm, Length: 38.23mm

GBP 41.73

1

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 650 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 5.84

1

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 170 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 540 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 5.22

1

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.46

1

IXYS N-Channel MOSFET, 36 A, 1000 V, 4-Pin SOT-227B IXFN36N100

IXYS N-Channel MOSFET, 36 A, 1000 V, 4-Pin SOT-227B IXFN36N100, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.6mm, Length: 38.23mm

GBP 41.56

1

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.29

1

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.36

1

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 170 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 540 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 5.51

1

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-247 IXFH94N30P3

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-247 IXFH94N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 6.70

1

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-3P IXFQ94N30P3

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-3P IXFQ94N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.3mm, Length: 15.8mm

GBP 6.57

1

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-3P IXFQ94N30P3

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-3P IXFQ94N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.3mm, Length: 15.8mm

GBP 6.57

1

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-247 IXFH94N30P3

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-247 IXFH94N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 7.07

1

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-3P IXFQ94N30P3

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-3P IXFQ94N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.3mm, Length: 15.8mm

GBP 6.22

1

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-247 IXFH94N30P3

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-247 IXFH94N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 6.72

1

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IXYS IXYH20N120C3D1 IGBT, 36 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH20N120C3D1 IGBT, 36 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH20N120C3D1 IGBT, 36 A 1200 V, 3-Pin TO-247, Through Hole

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P

IXYS N-Channel MOSFET, 36 A, 1000 V, 4-Pin SOT-227B IXFN36N100

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 1000 V, 4-Pin SOT-227B IXFN36N100

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-247 IXFH94N30P3

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-3P IXFQ94N30P3

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-3P IXFQ94N30P3

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-247 IXFH94N30P3

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-3P IXFQ94N30P3

IXYS N-Channel MOSFET, 94 A, 300 V, 3-Pin TO-247 IXFH94N30P3

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