DiodesZetex DGTD120T40S1PT IGBT, 80 A, 160 (Pulsed) A 1200 V, 3-Pin TO-247
DiodesZetex DGTD120T40S1PT IGBT, 80 A, 160 (Pulsed) A 1200 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 357 W, Mounting Type: Through Hole, Transistor Configuration: Single, Length: 16.26mm, Width: 5.31mm, Height: 21.46mm, Dimensions: 16.26 x 5.31 x 21.46mm, Gate Capacitance: 6030pF, Maximum Operating Temperature: +150 °C