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DiodesZetex Diodes Inc ZXTP23015CFHTA PNP Transistor, 6 A, 15 V, 3-Pin SOT-23

DiodesZetex Diodes Inc ZXTP23015CFHTA PNP Transistor, 6 A, 15 V, 3-Pin SOT-23

DiodesZetex Diodes Inc ZXTP23015CFHTA PNP Transistor, 6 A, 15 V, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 1.81 W, Transistor Configuration: Single, Maximum Collector Base Voltage: -15 V, Maximum Emitter Base Voltage: -7 V, Maximum Operating Frequency: 270 MHz, Dimensions: 3.04 x 1.4 x 1.02mm, Maximum Base Emitter Saturation Voltage: -1.03 V, Maximum Collector Emitter Saturation Voltage: -190 mV

GBP 0.62
1

DiodesZetex Diodes Inc ZXTP23015CFHTA PNP Transistor, 6 A, 15 V, 3-Pin SOT-23

DiodesZetex Diodes Inc ZXTP23015CFHTA PNP Transistor, 6 A, 15 V, 3-Pin SOT-23

DiodesZetex Diodes Inc ZXTP23015CFHTA PNP Transistor, 6 A, 15 V, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 1.81 W, Transistor Configuration: Single, Maximum Collector Base Voltage: -15 V, Maximum Emitter Base Voltage: -7 V, Maximum Operating Frequency: 270 MHz, Dimensions: 3.04 x 1.4 x 1.02mm, Maximum Base Emitter Saturation Voltage: -1.03 V, Maximum Collector Emitter Saturation Voltage: -190 mV

GBP 0.27
1

DiodesZetex N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 30 V, 8-Pin TSSOP Diodes Inc DMN3020UTS-13

DiodesZetex N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 30 V, 8-Pin TSSOP Diodes Inc DMN3020UTS-13

DiodesZetex N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 30 V, 8-Pin TSSOP Diodes Inc DMN3020UTS-13, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 50 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 1.4 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±12 V, Automotive Standard: AEC-Q101

GBP 0.11
1

DiodesZetex N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 30 V, 8-Pin TSSOP Diodes Inc DMN3020UTS-13

DiodesZetex N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 30 V, 8-Pin TSSOP Diodes Inc DMN3020UTS-13

DiodesZetex N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 30 V, 8-Pin TSSOP Diodes Inc DMN3020UTS-13, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 50 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 1.4 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±12 V, Automotive Standard: AEC-Q101

GBP 0.28
1

DiodesZetex N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 30 V, 8-Pin TSSOP Diodes Inc DMN3020UTS-13

DiodesZetex N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 30 V, 8-Pin TSSOP Diodes Inc DMN3020UTS-13

DiodesZetex N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 30 V, 8-Pin TSSOP Diodes Inc DMN3020UTS-13, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 50 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 1.4 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±12 V, Automotive Standard: AEC-Q101

GBP 0.12
1

DiodesZetex N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMN1004UFDF-7

DiodesZetex N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMN1004UFDF-7

DiodesZetex N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMN1004UFDF-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.3V, Maximum Power Dissipation: 2.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±8 V, Forward Diode Voltage: 1.2V

GBP 0.40
1

DiodesZetex N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMN1004UFDF-7

DiodesZetex N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMN1004UFDF-7

DiodesZetex N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMN1004UFDF-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.3V, Maximum Power Dissipation: 2.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±8 V, Forward Diode Voltage: 1.2V

GBP 0.16
1

DiodesZetex N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMN1004UFDF-7

DiodesZetex N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMN1004UFDF-7

DiodesZetex N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMN1004UFDF-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.3V, Maximum Power Dissipation: 2.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±8 V, Forward Diode Voltage: 1.2V

GBP 0.32
1

DiodesZetex Dual N/P-Channel MOSFET, 15 A, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LDV-7

DiodesZetex Dual N/P-Channel MOSFET, 15 A, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LDV-7

DiodesZetex Dual N/P-Channel MOSFET, 15 A, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LDV-7, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, 38 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2 V, 2.4V, Minimum Gate Threshold Voltage: 1.2 V, 1.4V, Maximum Power Dissipation: 1.8 W, Transistor Configuration: Dual Base, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.8mm

GBP 0.16
1

DiodesZetex Dual N/P-Channel MOSFET, 15 A, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LDV-7

DiodesZetex Dual N/P-Channel MOSFET, 15 A, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LDV-7

DiodesZetex Dual N/P-Channel MOSFET, 15 A, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LDV-7, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, 38 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2 V, 2.4V, Minimum Gate Threshold Voltage: 1.2 V, 1.4V, Maximum Power Dissipation: 1.8 W, Transistor Configuration: Dual Base, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.8mm

GBP 0.15
1

DiodesZetex Dual N/P-Channel MOSFET, 15 A, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LDV-7

DiodesZetex Dual N/P-Channel MOSFET, 15 A, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LDV-7

DiodesZetex Dual N/P-Channel MOSFET, 15 A, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LDV-7, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, 38 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2 V, 2.4 V, Minimum Gate Threshold Voltage: 1.2 V, 1.4 V, Maximum Power Dissipation: 1.8 W, Transistor Configuration: Dual Base, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.8mm

GBP 0.44
1