Infineon Ff200R12Ke3Hosa1
IGBT, MODULE, N-CH, 1.2KV, 295A; Transistor Polarity:N Channel; DC Collector Current:295A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:1.05kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:125°C; Product Range:-; SVHC:No SVHC (27-Jun-2018)