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IGBT, 650V, 80A, TO-247;
SILICON CARBIDE SCHOTTKY DIODE, TO-247;
MOSFET DRIVER, -40 TO 125DEG C;
IGBT, 650V, 80A, 305W, TO-247;
TRANSISTOR, IGBT, 600V, 76A, TO-247AD;
SIC DIODE, 650V, 10A, TO-247;
TRANSISTOR, IGBT, 1.2KV, 82A, TO-247;
SIC DIODE, 600V, 12A, TO-220;
SIC DIODE, 650V, 12A, TO-247;
IGBT DRIVER, -40 TO 125DEG C;
SIC DIODE, 650V, 16A, TO-247;
MOSFET, N CH, 150V, 171A, TO-247AC;
MOSFET, N-CH, 600V, 35A, TO-220;
MOSFET, N-CH, 650V, 28A, TO-247;
MOSFET, N-CH, 60V, 298A, TO-262;
SIC SCHOTTKY DIODE, 1.2KV, 40A, TO-263;
MOSFET, N-CH, 650V, 26A, TO-247;
MOSFET, N-CH, 650V, 20A, TO-247;
MOSFET, N-CH, 650V, 50A, TO-263;
PRESSURE SENSOR, 300KPA, -40 TO 140DEG C;
MOSFET, N-CH, 650V, 36A, TO-247;