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SIC DIODE, 600V, 10A, TO-252;
TRANSISTOR, IGBT, 650V, 80A, TO-263;
SIC DIODE, 600V, 9A, TO-252;
SIC SCHOTTKY DIODE, 1.2KV, 31.9A, TO-263;
PRESSURE SENSOR, 300KPA, -40 TO 140DEG C;
MOSFET, N-CH, 150V, 136A, TO-263;
MOSFET, N-CH, 650V, 22A, TO-263;
SIC SCHOTTKY DIODE, 650V, 12A, TO-263;
SIC SCHOTTKY DIODE, 1.2KV, 40A, TO-263;
MOSFET, N-CH, 650V, 14A, TO-263;
MOSFET, N-CH, 650V, 50A, TO-263;
RF TRANSCEIVER, 24.25GHZ, -40 TO 85DEG C;
MOSFET, N-CH, 650V, 25A, TO-263;
MOSFET, N-CH, 650V, 21A, TO-263/D2PAK;
IGBT DRIVER, HIGH SIDE, -40 TO 125DEG C;
GMR/AMR ANGLE SENSOR, -40 TO 125DEG C;