Pricemate

onsemi MC100EP140DG, Phase Frequency Detector 2.1GHz 5 8-Pin SOIC

onsemi MC100EP140DG, Phase Frequency Detector 2.1GHz 5 8-Pin SOIC, Maximum Supply Current: 93 mA, Mounting Type: Surface Mount, Dimensions: 5 x 4 x 1.5mm, Width: 4mm, Maximum Operating Supply Voltage: ±3.6 V, Maximum Operating Temperature: +85 °C, Minimum Operating Supply Voltage: ±3 V, Minimum Operating Temperature: -40 °C

GBP 8.35

1

onsemi MC100EP140DG, Phase Frequency Detector 2.1GHz 5 8-Pin SOIC

onsemi MC100EP140DG, Phase Frequency Detector 2.1GHz 5 8-Pin SOIC, Maximum Supply Current: 93 mA, Mounting Type: Surface Mount, Dimensions: 5 x 4 x 1.5mm, Width: 4mm, Maximum Operating Supply Voltage: ±3.6 V, Maximum Operating Temperature: +85 °C, Minimum Operating Supply Voltage: ±3 V, Minimum Operating Temperature: -40 °C

GBP 8.76

1

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole, Maximum Gate Emitter Voltage: ±25V, Transistor Configuration: Single, Dimensions: 20 x 5 x 26mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 5.83

1

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole, Maximum Gate Emitter Voltage: ±25V, Transistor Configuration: Single, Dimensions: 20 x 5 x 26mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 5.04

1

onsemi MJL4302AG PNP Transistor, 15 A, 350 V, 3-Pin TO-3BPL

onsemi MJL4302AG PNP Transistor, 15 A, 350 V, 3-Pin TO-3BPL, Mounting Type: Through Hole, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 35 MHz, Dimensions: 26.4 x 20.3 x 5.3mm, Height: 26.4mm

GBP 4.99

1

onsemi MJL4281AG NPN Transistor, 15 A, 350 V, 3-Pin TO-3PBL

onsemi MJL4281AG NPN Transistor, 15 A, 350 V, 3-Pin TO-3PBL, Mounting Type: Through Hole, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 35 MHz, Dimensions: 26.4 x 20.3 x 5.3mm, Height: 26.4mm

GBP 4.95

1

onsemi 2N6287G PNP Transistor, 20 A, 100 V dc, 3-Pin TO-204AA

onsemi 2N6287G PNP Transistor, 20 A, 100 V dc, 3-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 6.14

1

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.68

1

onsemi FGA60N60UFDTU IGBT, 120 A 600 V, 3-Pin TO-3P, Through Hole

onsemi FGA60N60UFDTU IGBT, 120 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 298 W, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.95

1

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole, Maximum Gate Emitter Voltage: ±25V, Transistor Configuration: Single, Length: 20mm, Width: 5mm, Height: 26mm, Dimensions: 20 x 5 x 26mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 5.25

1

onsemi MJ11016G NPN Darlington Pair, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11016G NPN Darlington Pair, 30 A 120 V HFE:200, 3-Pin TO-204, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 4 V, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.11

1

onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 4 V, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.13

1

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 4 V, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 6.81

1

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 4 V, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.44

1

onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 4 V, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 6.85

1

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 4 V, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.11

1

onsemi FGA60N60UFDTU IGBT, 120 A 600 V, 3-Pin TO-3P, Through Hole

onsemi FGA60N60UFDTU IGBT, 120 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 298 W, Transistor Configuration: Single, Length: 15.8mm, Width: 5mm, Height: 20.1mm, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.41

1

onsemi MJ21196G NPN Transistor, 30 A, 250 V dc, 3-Pin TO-204AA

onsemi MJ21196G NPN Transistor, 30 A, 250 V dc, 3-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 400 V dc, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 4.90

1

onsemi MJ21196G NPN Transistor, 30 A, 250 V dc, 3-Pin TO-204AA

onsemi MJ21196G NPN Transistor, 30 A, 250 V dc, 3-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 400 V dc, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.93

1

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA, Maximum DC Collector Current: 20 (Continuous) A, 40 (Peak) A, Mounting Type: Through Hole, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.06

1

onsemi 2N6287G PNP Transistor, 20 A, 100 V dc, 3-Pin TO-204AA

onsemi 2N6287G PNP Transistor, 20 A, 100 V dc, 3-Pin TO-204AA, Maximum DC Collector Current: 20 (Continuous) A, 40 (Peak) A, Mounting Type: Through Hole, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.49

1

onsemi MJ15023G PNP Transistor, 16 A, 200 V, 3-Pin TO-204

onsemi MJ15023G PNP Transistor, 16 A, 200 V, 3-Pin TO-204, Mounting Type: Through Hole, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 350 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 4 MHz, Dimensions: 8.51 x 39.37 x 26.67mm, Maximum Collector Emitter Saturation Voltage: 4 V, Maximum Operating Temperature: +200 °C

GBP 4.81

1

onsemi MJ15025G PNP Transistor, 16 A, 250 V, 3-Pin TO-204

onsemi MJ15025G PNP Transistor, 16 A, 250 V, 3-Pin TO-204, Mounting Type: Through Hole, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 400 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 4 MHz, Dimensions: 8.51 x 39.37 x 26.67mm, Maximum Collector Emitter Saturation Voltage: 4 V, Maximum Operating Temperature: +200 °C

GBP 4.81

1

onsemi MJ15022G NPN Transistor, 16 A, 200 V, 3-Pin TO-204

onsemi MJ15022G NPN Transistor, 16 A, 200 V, 3-Pin TO-204, Mounting Type: Through Hole, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 350 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 4 MHz, Dimensions: 8.51 x 39.37 x 26.67mm, Maximum Collector Emitter Saturation Voltage: 4 V, Maximum Operating Temperature: +200 °C

GBP 6.07

1

onsemi MJ15024G NPN Transistor, 16 A, 250 V, 3-Pin TO-204

onsemi MJ15024G NPN Transistor, 16 A, 250 V, 3-Pin TO-204, Mounting Type: Through Hole, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 400 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 4 MHz, Dimensions: 8.51 x 39.37 x 26.67mm, Maximum Collector Emitter Saturation Voltage: 4 V, Maximum Operating Temperature: +200 °C

GBP 6.45

1

Brand

Gender

Merchant

Price (EUR)

onsemi MC100EP140DG, Phase Frequency Detector 2.1GHz 5 8-Pin SOIC

onsemi MC100EP140DG, Phase Frequency Detector 2.1GHz 5 8-Pin SOIC

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole

onsemi MJL4302AG PNP Transistor, 15 A, 350 V, 3-Pin TO-3BPL

onsemi MJL4281AG NPN Transistor, 15 A, 350 V, 3-Pin TO-3PBL

onsemi 2N6287G PNP Transistor, 20 A, 100 V dc, 3-Pin TO-204AA

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA

onsemi FGA60N60UFDTU IGBT, 120 A 600 V, 3-Pin TO-3P, Through Hole

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole

onsemi MJ11016G NPN Darlington Pair, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi FGA60N60UFDTU IGBT, 120 A 600 V, 3-Pin TO-3P, Through Hole

onsemi MJ21196G NPN Transistor, 30 A, 250 V dc, 3-Pin TO-204AA

onsemi MJ21196G NPN Transistor, 30 A, 250 V dc, 3-Pin TO-204AA

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA

onsemi 2N6287G PNP Transistor, 20 A, 100 V dc, 3-Pin TO-204AA

onsemi MJ15023G PNP Transistor, 16 A, 200 V, 3-Pin TO-204

onsemi MJ15025G PNP Transistor, 16 A, 250 V, 3-Pin TO-204

onsemi MJ15022G NPN Transistor, 16 A, 200 V, 3-Pin TO-204

onsemi MJ15024G NPN Transistor, 16 A, 250 V, 3-Pin TO-204

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