Pricemate

Vishay N-Channel MOSFET, 70 A, 30 V, 8-Pin PowerPAK SO SiRA84BDP-T1-GE3

Vishay N-Channel MOSFET, 70 A, 30 V, 8-Pin PowerPAK SO SiRA84BDP-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 36 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 1.1V

GBP 0.37

1

Vishay N-Channel MOSFET, 70 A, 30 V, 8-Pin PowerPAK SO SiRA84BDP-T1-GE3

Vishay N-Channel MOSFET, 70 A, 30 V, 8-Pin PowerPAK SO SiRA84BDP-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 36 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 1.1V

GBP 0.16

1

Vishay N-Channel MOSFET, 70 A, 30 V, 8-Pin PowerPAK SO SiRA84BDP-T1-GE3

Vishay N-Channel MOSFET, 70 A, 30 V, 8-Pin PowerPAK SO SiRA84BDP-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 36 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 1.1V

GBP 0.38

1

Vishay Resistor, Wirewound;30 Ohms;3 W;+/-5%;Axial;Silicone;1.5 In.;1000 VAC;+/-30 ppm/

Vishay Resistor, Wirewound;30 Ohms;3 W;+/-5%;Axial;Silicone;1.5 In.;1000 VAC;+/-30 ppm/, MPN: CW02B30R00JE12

GBP 0.54

1

Vishay Resistor; Wirewound;30 Ohms;5 W;+/-5%;Axial;Silicone;1.5 In.;1000 VAC;+/-30 ppm/

Vishay Resistor; Wirewound;30 Ohms;5 W;+/-5%;Axial;Silicone;1.5 In.;1000 VAC;+/-30 ppm/, MPN: CW00530R00JE12

GBP 0.60

1

Vishay DG445DY-T1-E3 Analogue Switch Quad SPST 5 to 36 V, 16-Pin SOIC

Vishay DG445DY-T1-E3 Analogue Switch Quad SPST 5 to 36 V, 16-Pin SOIC, Mounting Type: Surface Mount, Typical Single Supply Voltage: 5 → 36 V, Power Supply Type: Dual, Single, Input Signal Type: Single Ended, Typical Dual Supply Voltage: ±5 → ±20V, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +85 °C, Dimensions: 10 x 4 x 1.55mm

GBP 1.39

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.9 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.55mm

GBP 0.40

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.9 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.55mm

GBP 0.39

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.9 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.55mm

GBP 0.92

1

Vishay LED; Red; 5 mcd (Typ.); 3 mm; T-1; 30 mA; 2 V (Typ.); 15 V (Typ.); 100 mW; 30 d

Vishay LED; Red; 5 mcd (Typ.); 3 mm; T-1; 30 mA; 2 V (Typ.); 15 V (Typ.); 100 mW; 30 d, MPN: TLHR4401

GBP 0.10

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Height: 1.12mm, Length: 3.4mm

GBP 0.78

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Height: 1.12mm, Length: 3.4mm

GBP 0.38

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Height: 1.12mm, Length: 3.4mm

GBP 0.59

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 1.2V

GBP 0.21

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 1.2V

GBP 0.22

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 1.2V

GBP 0.68

1

Vishay N-Channel MOSFET, 1.4 A, 600 V, 3-Pin IPAK IRFU1N60APBF

Vishay N-Channel MOSFET, 1.4 A, 600 V, 3-Pin IPAK IRFU1N60APBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 7 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 36 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 6.22mm, Length: 6.73mm

GBP 1.24

1

Vishay N-Channel MOSFET, 1.4 A, 600 V, 3-Pin IPAK IRFU1N60APBF

Vishay N-Channel MOSFET, 1.4 A, 600 V, 3-Pin IPAK IRFU1N60APBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 7 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 36 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 6.22mm, Length: 6.73mm

GBP 1.24

1

Vishay Dual N-Channel 30-V (D-S) MOSFET

Vishay Dual N-Channel 30-V (D-S) MOSFET, MPN: SI4948BEY-T1-E3

GBP 0.99

1

Vishay Dual N-Channel 30-V (D-S) MOSFET

Vishay Dual N-Channel 30-V (D-S) MOSFET, MPN: SI4948BEY-T1-E3

GBP 0.94

1

Vishay Dual N-Channel 30-V (D-S) MOSFET

Vishay Dual N-Channel 30-V (D-S) MOSFET, MPN: SI4948BEY-T1-E3

GBP 0.49

1

Vishay N-Channel MOSFET, 23 A, 36 A, 650 V, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3

Vishay N-Channel MOSFET, 23 A, 36 A, 650 V, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3, Maximum Drain Source Resistance: 0.071 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 4.02

1

Vishay N-Channel MOSFET, 23 A, 36 A, 650 V, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3

Vishay N-Channel MOSFET, 23 A, 36 A, 650 V, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3, Maximum Drain Source Resistance: 0.071 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 7.03

1

Vishay N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC SIHG32N50D-GE3

Vishay N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC SIHG32N50D-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 150 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.82mm, Length: 15.87mm

GBP 3.93

1

Vishay N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC SiHG32N50D-GE3

Vishay N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC SiHG32N50D-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 150 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.82mm, Length: 15.87mm

GBP 4.62

1

Brand

Colour

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Merchant

Price (EUR)

Vishay N-Channel MOSFET, 70 A, 30 V, 8-Pin PowerPAK SO SiRA84BDP-T1-GE3

Vishay N-Channel MOSFET, 70 A, 30 V, 8-Pin PowerPAK SO SiRA84BDP-T1-GE3

Vishay N-Channel MOSFET, 70 A, 30 V, 8-Pin PowerPAK SO SiRA84BDP-T1-GE3

Vishay Resistor, Wirewound;30 Ohms;3 W;+/-5%;Axial;Silicone;1.5 In.;1000 VAC;+/-30 ppm/

Vishay Resistor; Wirewound;30 Ohms;5 W;+/-5%;Axial;Silicone;1.5 In.;1000 VAC;+/-30 ppm/

Vishay DG445DY-T1-E3 Analogue Switch Quad SPST 5 to 36 V, 16-Pin SOIC

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3

Vishay LED; Red; 5 mcd (Typ.); 3 mm; T-1; 30 mA; 2 V (Typ.); 15 V (Typ.); 100 mW; 30 d

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3

Vishay N-Channel MOSFET, 1.4 A, 600 V, 3-Pin IPAK IRFU1N60APBF

Vishay N-Channel MOSFET, 1.4 A, 600 V, 3-Pin IPAK IRFU1N60APBF

Vishay Dual N-Channel 30-V (D-S) MOSFET

Vishay Dual N-Channel 30-V (D-S) MOSFET

Vishay Dual N-Channel 30-V (D-S) MOSFET

Vishay N-Channel MOSFET, 23 A, 36 A, 650 V, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3

Vishay N-Channel MOSFET, 23 A, 36 A, 650 V, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3

Vishay N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC SIHG32N50D-GE3

Vishay N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC SiHG32N50D-GE3

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