Pricemate

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 12.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 88 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.88

1

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 12.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 88 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.77

1

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 12.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 88 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.89

1

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 67 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.47

1

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 67 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.59

1

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220SIS TK40A06N1,S4X(S

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220SIS TK40A06N1,S4X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 30 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15mm, Length: 10mm

GBP 0.45

1

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

GBP 1.49

1

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M, Maximum Drain Source Resistance: 2.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V

GBP 1.21

1

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M, Maximum Drain Source Resistance: 2.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V

GBP 1.91

1

Toshiba N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON TPN14006NH

Toshiba N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON TPN14006NH, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 30 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.22

1

Toshiba N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON TPN14006NH

Toshiba N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON TPN14006NH, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 30 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.27

1

Toshiba N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON TPN14006NH

Toshiba N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON TPN14006NH, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 30 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.35

1

Toshiba P-Channel MOSFET, 60 A, 40 V, 3-Pin DPAK TJ60S04M3L

Toshiba P-Channel MOSFET, 60 A, 40 V, 3-Pin DPAK TJ60S04M3L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 90 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +10 V, Automotive Standard: AEC-Q101

GBP 0.98

1

Toshiba P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TJ8S06M3L

Toshiba P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TJ8S06M3L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 130 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 27 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +10 V, Automotive Standard: AEC-Q101

GBP 0.83

1

Toshiba P-Channel MOSFET, 60 A, 40 V, 3-Pin DPAK TJ60S04M3L

Toshiba P-Channel MOSFET, 60 A, 40 V, 3-Pin DPAK TJ60S04M3L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 90 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +10 V, Automotive Standard: AEC-Q101

GBP 0.86

1

Toshiba P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TJ8S06M3L

Toshiba P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TJ8S06M3L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 130 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 27 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +10 V, Automotive Standard: AEC-Q101

GBP 0.42

1

Toshiba P-Channel MOSFET, 60 A, 40 V, 3-Pin DPAK TJ60S04M3L

Toshiba P-Channel MOSFET, 60 A, 40 V, 3-Pin DPAK TJ60S04M3L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 90 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +10 V, Automotive Standard: AEC-Q101

GBP 0.98

1

Toshiba P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TJ8S06M3L

Toshiba P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TJ8S06M3L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 130 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 27 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +10 V, Automotive Standard: AEC-Q101

GBP 0.75

1

Toshiba GT60J323(Q) IGBT, 60 A 600 V, 3-Pin TO-3PLH, Through Hole

Toshiba GT60J323(Q) IGBT, 60 A 600 V, 3-Pin TO-3PLH, Through Hole, Maximum Gate Emitter Voltage: ±25V, Transistor Configuration: Single, Length: 20.5mm, Width: 5.2mm, Height: 26mm, Dimensions: 20.5 x 5.2 x 26mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 5.30

1

Toshiba N-Channel MOSFET, 200 mA, 60 V, 3-Pin USM SSM3K7002FU(F)

Toshiba N-Channel MOSFET, 200 mA, 60 V, 3-Pin USM SSM3K7002FU(F), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.9mm, Length: 2mm

GBP 0.09

1

Toshiba N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1

Toshiba N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 255 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 1.42

1

Toshiba N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 TK30E06N1

Toshiba N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 TK30E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 53 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.31

1

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.63

1

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.80

1

Toshiba N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1

Toshiba N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 255 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 2.57

1

Brand

Gender

Merchant

Price (EUR)

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220SIS TK40A06N1,S4X(S

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

Toshiba N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON TPN14006NH

Toshiba N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON TPN14006NH

Toshiba N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON TPN14006NH

Toshiba P-Channel MOSFET, 60 A, 40 V, 3-Pin DPAK TJ60S04M3L

Toshiba P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TJ8S06M3L

Toshiba P-Channel MOSFET, 60 A, 40 V, 3-Pin DPAK TJ60S04M3L

Toshiba P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TJ8S06M3L

Toshiba P-Channel MOSFET, 60 A, 40 V, 3-Pin DPAK TJ60S04M3L

Toshiba P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TJ8S06M3L

Toshiba GT60J323(Q) IGBT, 60 A 600 V, 3-Pin TO-3PLH, Through Hole

Toshiba N-Channel MOSFET, 200 mA, 60 V, 3-Pin USM SSM3K7002FU(F)

Toshiba N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1

Toshiba N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 TK30E06N1

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1

Toshiba N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1

Powered by Cobiro