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Infineon N-Channel MOSFET, 112 A, 40 V, 9-Pin DirectFET Medium Can AUIRL7736M2TR

GBP 3.77

1

Infineon N-Channel MOSFET, 18 A, 150 V, 7-Pin DirectFET Medium Can AUIRF7675M2TR

GBP 1.58

1

Infineon N-Channel MOSFET, 112 A, 40 V, 9-Pin DirectFET Medium Can AUIRL7736M2TR

Infineon N-Channel MOSFET, 112 A, 40 V, 9-Pin DirectFET Medium Can AUIRL7736M2TR, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.003 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Series: HEXFET

GBP 4.10

1

Infineon N-Channel MOSFET, 18 A, 150 V, 7-Pin DirectFET Medium Can AUIRF7675M2TR

Infineon N-Channel MOSFET, 18 A, 150 V, 7-Pin DirectFET Medium Can AUIRF7675M2TR, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.056 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Series: HEXFET

GBP 1.09

1

Infineon N-Channel MOSFET, 112 A, 40 V, 9-Pin DirectFET Medium Can AUIRL7736M2TR

Infineon N-Channel MOSFET, 112 A, 40 V, 9-Pin DirectFET Medium Can AUIRL7736M2TR, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.003 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Series: HEXFET

GBP 1.57

1

Infineon N-Channel MOSFET, 18 A, 150 V, 7-Pin DirectFET Medium Can AUIRF7675M2TR

Infineon N-Channel MOSFET, 18 A, 150 V, 7-Pin DirectFET Medium Can AUIRF7675M2TR, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.056 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Series: HEXFET

GBP 1.73

1

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Infineon N-Channel MOSFET, 112 A, 40 V, 9-Pin DirectFET Medium Can AUIRL7736M2TR

Infineon N-Channel MOSFET, 18 A, 150 V, 7-Pin DirectFET Medium Can AUIRF7675M2TR

Infineon N-Channel MOSFET, 112 A, 40 V, 9-Pin DirectFET Medium Can AUIRL7736M2TR

Infineon N-Channel MOSFET, 18 A, 150 V, 7-Pin DirectFET Medium Can AUIRF7675M2TR

Infineon N-Channel MOSFET, 112 A, 40 V, 9-Pin DirectFET Medium Can AUIRL7736M2TR

Infineon N-Channel MOSFET, 18 A, 150 V, 7-Pin DirectFET Medium Can AUIRF7675M2TR

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