Pricemate

STMicroelectronics MOSFET, SCTH70N120G2V-7, 90 A, 1.200 V, 7-Pin, H?PAK-7 SCTH70N

STMicroelectronics MOSFET, 90 A, 1.200 V, 7-Pin, H?PAK-7 SCTH70N, MPN: SCTH70N120G2V-7

EUR 39.03

1

STMicroelectronics MOSFET, H ?PAK-7 90 A 1200 V, 7 broches

STMicroelectronics MOSFET, H ?PAK-7 90 A 1200 V, 7 broches, MPN: SCTH70N120G2V-7

EUR 39.03

1

STMicroelectronics MOSFET, SCTH90N65G2V-7, N-Canal-Canal, 116 A, 650 V, 7-Pin, H²PAK-7 SCTH90 SiC

STMicroelectronics MOSFET, N-Canal-Canal, 116 A, 650 V, 7-Pin, H²PAK-7 SCTH90 SiC, MPN: SCTH90N65G2V-7

EUR 31.26

1

STMicroelectronics MOSFET, SCTH70N120G2V-7, 90 A, 1.200 V, 7-Pin, H?PAK-7 SCTH70N

STMicroelectronics MOSFET, 90 A, 1.200 V, 7-Pin, H?PAK-7 SCTH70N, Tipo de Montaje: Montaje superficial, Resistencia Máxima Drenador-Fuente: 0,21 O, Tensión de umbral de puerta máxima: 4.9V, MPN: SCTH70N120G2V-7

EUR 36.02

1

STMicroelectronics MOSFET, SCTH70N120G2V-7, 90 A, 1.200 V, 7-Pin, H?PAK-7 SCTH70N

STMicroelectronics MOSFET, 90 A, 1.200 V, 7-Pin, H?PAK-7 SCTH70N, Tipo de Montaje: Montaje superficial, Resistencia Máxima Drenador-Fuente: 0,21 O, Tensión de umbral de puerta máxima: 4.9V, MPN: SCTH70N120G2V-7

EUR 44.31

1

STMicroelectronics MOSFET canal N,, H²PAK-7 116 A 650 V, 7 broches

STMicroelectronics MOSFET canal N,, H²PAK-7 116 A 650 V, 7 broches, MPN: SCTH90N65G2V-7

EUR 31.26

1

STMicroelectronics MOSFET, H ?PAK-7 90 A 1200 V, 7 broches

STMicroelectronics MOSFET, H ?PAK-7 90 A 1200 V, 7 broches, Type de montage: CMS, Résistance Drain Source maximum: 0,21 O, Tension de seuil maximale de la grille: 4.9V, Série: SCTH70N, MPN: SCTH70N120G2V-7

EUR 44.31

1

STMicroelectronics MOSFET, H ?PAK-7 90 A 1200 V, 7 broches

STMicroelectronics MOSFET, H ?PAK-7 90 A 1200 V, 7 broches, Type de montage: CMS, Résistance Drain Source maximum: 0,21 O, Tension de seuil maximale de la grille: 4.9V, Série: SCTH70N, MPN: SCTH70N120G2V-7

EUR 36.02

1

STMicroelectronics MOSFET, SCTH90N65G2V-7, N-Canal-Canal, 116 A, 650 V, 7-Pin, H²PAK-7 SCTH90 SiC

STMicroelectronics MOSFET, N-Canal-Canal, 116 A, 650 V, 7-Pin, H²PAK-7 SCTH90 SiC, Resistencia Máxima Drenador-Fuente: 0,024 Ω, Modo de Canal: Mejora, Tensión de umbral de puerta máxima: 5V, MPN: SCTH90N65G2V-7

EUR 32.82

1

STMicroelectronics MOSFET, SCTH90N65G2V-7, N-Canal-Canal, 116 A, 650 V, 7-Pin, H²PAK-7 SCTH90 SiC

STMicroelectronics MOSFET, N-Canal-Canal, 116 A, 650 V, 7-Pin, H²PAK-7 SCTH90 SiC, Resistencia Máxima Drenador-Fuente: 0,024 Ω, Modo de Canal: Mejora, Tensión de umbral de puerta máxima: 5V, MPN: SCTH90N65G2V-7

EUR 33.26

1

STMicroelectronics Module MOSFET canal N,, H2PAK-7 33 A 1200 V, 7 broches

STMicroelectronics Module MOSFET canal N,, H2PAK-7 33 A 1200 V, 7 broches, MPN: SCTW100N65G2AG

EUR 35.10

1

STMicroelectronics Módulo de potencia SiC, SCTH50N120-7, N-Canal-Canal, 55 A, 1.200 V, 7-Pin, H2PAK SCTH50N120-7 SiC

STMicroelectronics Módulo de potencia SiC, N-Canal-Canal, 55 A, 1.200 V, 7-Pin, H2PAK SCTH50N120-7 SiC

EUR 31.16

1

STMicroelectronics Module MOSFET canal N,, H2PAK-7 98 A 650 V, 7 broches

STMicroelectronics Module MOSFET canal N,, H2PAK-7 98 A 650 V, 7 broches, MPN: SCTH100N65G2-7AG

EUR 26.89

1

STMicroelectronics MOSFET canal N,, H²PAK-7 116 A 650 V, 7 broches

STMicroelectronics MOSFET canal N,, H²PAK-7 116 A 650 V, 7 broches, Résistance Drain Source maximum: 0,024 Ω, Mode de canal: Enrichissement, Tension de seuil maximale de la grille: 5V, Matériau du transistor: SiC, Série: SCTH90, MPN: SCTH90N65G2V-7

EUR 32.82

1

STMicroelectronics MOSFET canal N,, H²PAK-7 116 A 650 V, 7 broches

STMicroelectronics MOSFET canal N,, H²PAK-7 116 A 650 V, 7 broches, Résistance Drain Source maximum: 0,024 Ω, Mode de canal: Enrichissement, Tension de seuil maximale de la grille: 5V, Matériau du transistor: SiC, Série: SCTH90, MPN: SCTH90N65G2V-7

EUR 33.26

1

STMicroelectronics Módulo de potencia SiC, SCTH50N120-7, N-Canal-Canal, 55 A, 1.200 V, 7-Pin, H2PAK SCTH50N120-7 SiC

STMicroelectronics Módulo de potencia SiC, N-Canal-Canal, 55 A, 1.200 V, 7-Pin, H2PAK SCTH50N120-7 SiC, Resistencia Máxima Drenador-Fuente: 0,065 Ω, Modo de Canal: Mejora, Tensión de umbral de puerta máxima: 5.1V

EUR 28.78

1

STMicroelectronics Módulo de potencia SiC, SCTH50N120-7, N-Canal-Canal, 55 A, 1.200 V, 7-Pin, H2PAK SCTH50N120-7 SiC

STMicroelectronics Módulo de potencia SiC, N-Canal-Canal, 55 A, 1.200 V, 7-Pin, H2PAK SCTH50N120-7 SiC, Resistencia Máxima Drenador-Fuente: 0,065 Ω, Modo de Canal: Mejora, Tensión de umbral de puerta máxima: 5.1V

EUR 35.36

1

STMicroelectronics Módulo MOSFET, SCTW100N65G2AG, N-Canal-Canal, 33 A, 1.200 V, Reducción, 7-Pin, H2PAK-7 SCT SiC

STMicroelectronics Módulo MOSFET, N-Canal-Canal, 33 A, 1.200 V, Reducción, 7-Pin, H2PAK-7 SCT SiC, MPN: SCTW100N65G2AG

EUR 35.10

1

STMicroelectronics Módulo MOSFET, SCTH100N65G2-7AG, N-Canal-Canal, 98 A, 650 V, Reducción, 7-Pin, H2PAK-7 SCT SiC

STMicroelectronics Módulo MOSFET, N-Canal-Canal, 98 A, 650 V, Reducción, 7-Pin, H2PAK-7 SCT SiC, MPN: SCTH100N65G2-7AG

EUR 26.89

1

STMicroelectronics Module MOSFET canal N,, H2PAK-7 33 A 1200 V, 7 broches

STMicroelectronics Module MOSFET canal N,, H2PAK-7 33 A 1200 V, 7 broches, Résistance Drain Source maximum: 0,105 Ω, Mode de canal: Depletion, Tension de seuil maximale de la grille: 5V, Matériau du transistor: SiC, Série: SCT, MPN: SCTH40N120G2V7AG

EUR 22.86

1

STMicroelectronics Module MOSFET canal N,, H2PAK-7 33 A 1200 V, 7 broches

STMicroelectronics Module MOSFET canal N,, H2PAK-7 33 A 1200 V, 7 broches, Résistance Drain Source maximum: 0,105 Ω, Mode de canal: Depletion, Tension de seuil maximale de la grille: 5V, Matériau du transistor: SiC, Série: SCT, MPN: SCTW100N65G2AG

EUR 35.83

1

STMicroelectronics Module MOSFET canal N,, H2PAK-7 33 A 1200 V, 7 broches

STMicroelectronics Module MOSFET canal N,, H2PAK-7 33 A 1200 V, 7 broches, Résistance Drain Source maximum: 0,105 Ω, Mode de canal: Depletion, Tension de seuil maximale de la grille: 5V, Matériau du transistor: SiC, Série: SCT, MPN: SCTW100N65G2AG

EUR 31.55

1

STMicroelectronics Module MOSFET canal N,, H2PAK-7 98 A 650 V, 7 broches

STMicroelectronics Module MOSFET canal N,, H2PAK-7 98 A 650 V, 7 broches, Résistance Drain Source maximum: 0,02 Ω, Mode de canal: Depletion, Tension de seuil maximale de la grille: 5V, Nombre d'éléments par circuit: 1, Matériau du transistor: SiC, Série: SCT, MPN: SCTH100N65G2-7AG

EUR 27.10

1

STMicroelectronics Module MOSFET canal N,, H2PAK-7 98 A 650 V, 7 broches

STMicroelectronics Module MOSFET canal N,, H2PAK-7 98 A 650 V, 7 broches, Résistance Drain Source maximum: 0,02 Ω, Mode de canal: Depletion, Tension de seuil maximale de la grille: 5V, Nombre d'éléments par circuit: 1, Matériau du transistor: SiC, Série: SCT, MPN: SCTH100N65G2-7AG

EUR 34.66

1

STMicroelectronics MOSFET, 0,21 O, 90 A, H?PAK-7, Montaggio superficiale

STMicroelectronics MOSFET, 0,21 O, 90 A, H?PAK-7, Montaggio superficiale, MPN: SCTH70N120G2V-7

EUR 39.03

1

Marque

Genre

Marchand

Prix (EUR)

STMicroelectronics MOSFET, SCTH70N120G2V-7, 90 A, 1.200 V, 7-Pin, H?PAK-7 SCTH70N

STMicroelectronics MOSFET, H ?PAK-7 90 A 1200 V, 7 broches

STMicroelectronics MOSFET, SCTH90N65G2V-7, N-Canal-Canal, 116 A, 650 V, 7-Pin, H²PAK-7 SCTH90 SiC

STMicroelectronics MOSFET, SCTH70N120G2V-7, 90 A, 1.200 V, 7-Pin, H?PAK-7 SCTH70N

STMicroelectronics MOSFET, SCTH70N120G2V-7, 90 A, 1.200 V, 7-Pin, H?PAK-7 SCTH70N

STMicroelectronics MOSFET canal N,, H²PAK-7 116 A 650 V, 7 broches

STMicroelectronics MOSFET, H ?PAK-7 90 A 1200 V, 7 broches

STMicroelectronics MOSFET, H ?PAK-7 90 A 1200 V, 7 broches

STMicroelectronics MOSFET, SCTH90N65G2V-7, N-Canal-Canal, 116 A, 650 V, 7-Pin, H²PAK-7 SCTH90 SiC

STMicroelectronics MOSFET, SCTH90N65G2V-7, N-Canal-Canal, 116 A, 650 V, 7-Pin, H²PAK-7 SCTH90 SiC

STMicroelectronics Module MOSFET canal N,, H2PAK-7 33 A 1200 V, 7 broches

STMicroelectronics Módulo de potencia SiC, SCTH50N120-7, N-Canal-Canal, 55 A, 1.200 V, 7-Pin, H2PAK SCTH50N120-7 SiC

STMicroelectronics Module MOSFET canal N,, H2PAK-7 98 A 650 V, 7 broches

STMicroelectronics MOSFET canal N,, H²PAK-7 116 A 650 V, 7 broches

STMicroelectronics MOSFET canal N,, H²PAK-7 116 A 650 V, 7 broches

STMicroelectronics Módulo de potencia SiC, SCTH50N120-7, N-Canal-Canal, 55 A, 1.200 V, 7-Pin, H2PAK SCTH50N120-7 SiC

STMicroelectronics Módulo de potencia SiC, SCTH50N120-7, N-Canal-Canal, 55 A, 1.200 V, 7-Pin, H2PAK SCTH50N120-7 SiC

STMicroelectronics Módulo MOSFET, SCTW100N65G2AG, N-Canal-Canal, 33 A, 1.200 V, Reducción, 7-Pin, H2PAK-7 SCT SiC

STMicroelectronics Módulo MOSFET, SCTH100N65G2-7AG, N-Canal-Canal, 98 A, 650 V, Reducción, 7-Pin, H2PAK-7 SCT SiC

STMicroelectronics Module MOSFET canal N,, H2PAK-7 33 A 1200 V, 7 broches

STMicroelectronics Module MOSFET canal N,, H2PAK-7 33 A 1200 V, 7 broches

STMicroelectronics Module MOSFET canal N,, H2PAK-7 33 A 1200 V, 7 broches

STMicroelectronics Module MOSFET canal N,, H2PAK-7 98 A 650 V, 7 broches

STMicroelectronics Module MOSFET canal N,, H2PAK-7 98 A 650 V, 7 broches

STMicroelectronics MOSFET, 0,21 O, 90 A, H?PAK-7, Montaggio superficiale

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